ArF Dry Resist
k8ÓéÀÖ's positive tone ArF (193 nm) dry photoresists have been optimized for trench and line and space (L/S) applications through pitch.
Features
- 90 nm 1:1 line and space
- 90 nm ISO line
Benefits
- Very large process window at various pitches
- Excellent profile
- Good ID bias
- Good etch resistance
1a: 90 nm L/90 nm S
90 nm ISO L
Figure 1: 170 nm on AR™ 26N/AR™ 4124 Fast Etch, 0.93NA, Ann. s: 0.72/0.49 , PSM mask, SB/PEB=125°C/110°C, PS=27.4mJ
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